FDN86246 Field Effect Transistor ON ON Semiconductor Package SOT23 Lot No. 21+

Technical Parameters

brand:ON
model:FDN86246
Package:SOT23
batch number:20+
quantity:15000
category:Discrete Semiconductor Products Transistors – FETs, MOSFETs – Single
manufacturer:all of them
series:PowerTrench®
FET type:N channel
Drain-source voltage (Vdss):150 V
Current at 25°C – Continuous Drain (Id):1.6A(Ta)
Driving Voltage (Max Rds On, Min Rds On):6V,10V
On-resistance (Maximum value) at different Id, Vgs:261 milliohms @ 1.6A, 10V
Vgs(th) (maximum value) at different Ids:4V @ 250µA
Gate charge (Qg) (maximum) at different Vgs:5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) at Vds:225pF @ 75V
Power Dissipation (Maximum):1.5W(Of)
Operating temperature:-55°C ~ 150°C(TJ)
Installation type:surface mount type
Package/Case:TO-236-3,SC-59,SOT-23-3

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